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this is information on a product in full production. january 2013 doc id 019012 rev 5 1/14 14 STGW60H65F stgwt60h65f 60 a, 650 v field stop trench gate igbt datasheet ? production data features high speed switching tight parameter distribution safe paralleling low thermal resistance 6 s short-circuit withstand time lead free package applications photovoltaic inverters uninterruptible power supply welding power factor correction high switching frequency converters description using advanced proprietary trench gate and field stop structure, this igbt leads to an optimized compromise between conduction and switching losses maximizing the efficiency for high switching frequency converters. furthermore, a slightly positive v ce(sat) temperature coefficient and a very tight parameter distribution result in an easier paralleling operation. figure 1. internal schematic diagram to-247 1 2 3 to-3p 1 2 3 table 1. device summary order code marking package packaging STGW60H65F gw60h65f to-247 tube stgwt60h65f g60h65f to-3p tube www.st.com free datasheet http://www.datasheet-pdf.com/
electrical ratings STGW60H65F, stgwt60h65f 2/14 doc id 019012 rev 5 1 electrical ratings table 2. absolute maximum ratings symbol parameter value unit v ces collector-emitter voltage (v ge = 0) 650 v i c continuous collector current at t c = 25 c 120 a i c continuous collector current at t c = 100 c 60 a i cp (1) 1. pulse width limited by maximum junction temperature and turn-off within rbsoa pulsed collector current 240 a v ge gate-emitter voltage 20 v p tot total dissipation at t c = 25 c 360 w t sc short-circuit withstand time at v cc = 400 v, v ge = 15 v 6s t stg storage temperature range - 55 to 150 c t j operating junction temperature table 3. thermal data symbol parameter value unit r thjc thermal resistance junction-case 0.35 c/w r thja thermal resistance junction-ambient 50 c/w free datasheet http://www.datasheet-pdf.com/
STGW60H65F, stgwt60h65f electrical characteristics doc id 019012 rev 5 3/14 2 electrical characteristics t j = 25 c unless otherwise specified. table 4. static symbol parameter test conditions min. typ. max. unit v (br)ces collector-emitter breakdown voltage (v ge = 0) i c = 2 ma 650 v v ce(sat) collector-emitter saturation voltage v ge = 15 v, i c = 60 a 1.9 v v ge = 15 v, i c = 60 a t j = 125 c 2.1 v ge(th) gate threshold voltage v ce = v ge , i c = 1 ma 6.0 v i ces collector cut-off current (v ge = 0) v ce = 650 v 25 a i ges gate-emitter leakage current (v ce = 0) v ge = 20 v 250 na table 5. dynamic symbol parameter test conditions min. typ. max. unit c ies c oes c res input capacitance output capacitance reverse transfer capacitance v ce = 25 v, f = 1 mhz, v ge =0 - 7150 275 140 - pf pf pf q g total gate charge v cc = 400 v, i c = 60 a, v ge = 15 v 217 nc q ge gate-emitter charge 67 nc q gc gate-collector charge 97 nc free datasheet http://www.datasheet-pdf.com/
electrical characteristics STGW60H65F, stgwt60h65f 4/14 doc id 019012 rev 5 table 6. switching on/off (inductive load) symbol parameter test conditions min. typ. max. unit t d(on) (1) t r (1) (di/dt) on (1) 1. eon is the turn-on losses when a sic diode (stpsc1206d) is used in the test circuit in figure 17 . if the igbt is offered in a package with a co-pack diode, t he co-pack diode is used as external diode. igbts and diode are at the same temperature (25 c and 125 c). tu r n - o n d e l ay t i m e current rise time turn-on current slope v ce = 400 v, i c = 60 a, r g = 10 , v ge = 15 v - 65 30 2000 - ns ns a/s t d(on) (1) t r (1) (di/dt) on (1) tu r n - o n d e l ay t i m e current rise time turn-on current slope v ce = 400 v, i c = 60 a, r g = 10 , v ge = 15 v t j = 125 c - 63 33 1800 - ns ns a/s t r (v off ) t d ( off ) t f off voltage rise time turn-off delay time current fall time v ce = 400 v, i c = 60 a, r g = 10 , v ge = 15 v - 35 180 43 - ns ns ns t r (v off ) t d ( off ) t f off voltage rise time turn-off delay time current fall time v ce = 400 v, i c = 60 a, r g = 10 , v ge = 15 v t j = 125 c - 46 210 85 - ns ns ns table 7. switching energy (inductive load) symbol parameter test conditions min. typ. max. unit eon (1) e off (2) e ts 1. eon is the turn-on losses when a sic diode (stpsc1206d) is used in the test circuit in figure 17 . if the igbt is offered in a package with a co-pack diode, t he co-pack diode is used as external diode. igbts and diode are at the same temperature (25 c and 125 c). 2. turn-off losses include also the tail of the collector current. turn-on switching losses turn-off switching losses total switching losses v ce = 400 v, i c = 60 a, r g = 10 , v ge = 15 v - 0.75 1.05 1.80 - mj mj mj eon (1) e off (2) e ts turn-on switching losses turn-off switching losses total switching losses v ce = 400 v, i c = 60 a, r g = 10 , v ge = 15 v t j = 125 c - 0.8 1.4 2.2 - mj mj mj free datasheet http://www.datasheet-pdf.com/
STGW60H65F, stgwt60h65f electrical characteristics doc id 019012 rev 5 5/14 2.1 electrical characteristics (curves) figure 2. output characteristics (t j = -40 c) figure 3. output characteristics (t j = 25 c) figure 4. output characteristics (t j = 150 c) figure 5. transfer characteristics figure 6. v ce(sat) vs. junction temperature figure 7. v ce(sat) vs. collector current am11847v1 0 20 40 60 80 100 120 140 160 180 200 220 01234 i c (a) v ce (v) 9v 11v 13v v ge = 15v v ge = 20v am11848v1 0 20 40 60 80 100 120 140 160 180 200 220 01234 i c (a) v ce (v) 9v 11v 13v v ge = 15v v ge = 20v am11849v1 0 20 40 60 80 100 120 140 160 180 200 220 01234 i c (a) v ce (v) 9v 11v 13v v ge = 15v v ge = 20v am11850v1 0 20 40 60 80 100 120 140 160 180 200 220 6 7 8 9 10 11 12 (v) i c (a) v ge t j = -40c t j = 25c t j = 150c v ce = 10v am11851v1 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 -50 -25 0 25 50 75 100 125 v ce (v) t j (oc) i c = 120a i c = 60a i c = 30a am11852v1 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 30 40 50 60 70 80 90 100 110 v ce (v) i c (a) t j = -40c t j = 25c t j = 150c v ge =15v free datasheet http://www.datasheet-pdf.com/
electrical characteristics STGW60H65F, stgwt60h65f 6/14 doc id 019012 rev 5 figure 8. normalized v ge(th) vs. junction temperature figure 9. gate charge vs. gate-emitter voltage figure 10. capacitance variations (f = 1 mhz, v ge = 0) figure 11. switching losses vs. collector current figure 12. switching losses vs. gate resistance figure 13. switching losses vs. temperature am11853v1 0.7 0.8 0.9 1.0 -50 -25 0 25 50 75 100 125 v ge(th) norm (v) t j (oc) i c = 1 ma am11854v1 0 2 4 6 8 10 12 14 16 0 50 100 150 200 v ge (v) qg (nc) am11855v1 10 100 1000 10000 0.1 1 10 c (pf) v ce (v) c res c oes c ies am11856v1 0 500 1000 1500 2000 2500 20 40 60 80 100 e (j) i c (a) t j = 25c t j = 125c ---- v cc = 400v, v ge = 15v, r g = 10 e on e off am11857v1 250 750 1250 1750 2250 2750 3250 0 10203040 e (j) r g () e on e off v cc = 400v, v ge = 15v, i c = 60 a, t j = 125c am11858v1 400 600 800 1000 1200 1400 25 50 75 100 125 e (j) t j (c) v cc = 400v, v ge = 15v, i c = 60 a, r g = 10 e on e off free datasheet http://www.datasheet-pdf.com/
STGW60H65F, stgwt60h65f electrical characteristics doc id 019012 rev 5 7/14 figure 14. turn-off soa figure 15. short circuit time & current vs. v ge figure 16. maximum normalized z th junction to case (igbt) am11859v1 0.01 0.1 1 10 100 0.1 1 10 100 i c (a) v ce (v) v ge = 15 v, r g = 10 t c = 150 c am11860v1 50 150 250 350 2.5 5 7.5 10 12.5 15 17.5 20 9 101112131415 i sc (a) t sc (s) v ge (v) v cc = 400v, t c = 25c t sc i sc am11861v1 1e-02 1e-01 1.e-05 1.e-04 1.e-03 1.e-02 1.e-01 k t p (s) single pulse d=0.01 d=0.02 d=0.05 d=0.1 d=0.2 d=0.5 free datasheet http://www.datasheet-pdf.com/
test circuits STGW60H65F, stgwt60h65f 8/14 doc id 019012 rev 5 3 test circuits figure 17. test circuit for inductive load switching figure 18. gate charge test circuit figure 19. switching waveform am01504v1 am01505v1 am01506v1 90% 10% 90% 10% v g v ce i c td(on) to n tr(ion) td(off) toff tf tr(voff) tcro ss 90% 10% free datasheet http://www.datasheet-pdf.com/
STGW60H65F, stgwt60h65f package mechanical data doc id 019012 rev 5 9/14 4 package mechanical data in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com . ecopack ? is an st trademark. table 8. to-247 mechanical data dim. mm min. typ. max. a 4.85 5.15 a1 2.20 2.60 b1.0 1.40 b1 2.0 2.40 b2 3.0 3.40 c 0.40 0.80 d 19.85 20.15 e 15.45 15.75 e5.45 l 14.20 14.80 l1 3.70 4.30 l2 18.50 ? p 3.55 3.65 ? r 4.50 5.50 s5.50 free datasheet http://www.datasheet-pdf.com/
package mechanical data STGW60H65F, stgwt60h65f 10/14 doc id 019012 rev 5 figure 20. to-247 drawing 0075 3 25_f free datasheet http://www.datasheet-pdf.com/
STGW60H65F, stgwt60h65f package mechanical data doc id 019012 rev 5 11/14 table 9. to-3p mechanical data dim. mm min. typ. max. a4.60 5 a1 1.45 1.50 1.65 a2 1.20 1.40 1.60 b0.8011.20 b1 1.80 2.20 b2 2.80 3.20 c0.550.600.75 d 19.70 19.90 20.10 d1 13.90 e 15.40 15.80 e1 13.60 e2 9.60 e5.155.455.75 l 19.50 20 20.50 l1 3.50 l2 18.20 18.40 18.60 ?p 3.10 3.30 q5 q1 3.80 free datasheet http://www.datasheet-pdf.com/
package mechanical data STGW60H65F, stgwt60h65f 12/14 doc id 019012 rev 5 figure 21. to-3p drawing 8045950_a free datasheet http://www.datasheet-pdf.com/
STGW60H65F, stgwt60h65f revision history doc id 019012 rev 5 13/14 5 revision history table 10. document revision history date revision changes 05-jul-2011 1 initial release. 12-jan-2012 2 document status promoted from preliminary data to datasheet. 10-feb-2012 3 added: section 2.1: electrical characteristics (curves) . 31-jul-2012 4 updated: figure 8 on page 6 . 09-jan-2013 5 added: new order code stgwt60h65f, package mechanical data table 9 on page 11 and figure 21 on page 12 . free datasheet http://www.datasheet-pdf.com/
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